? 2005 ixys all rights reserved 1 - 4 vkm 60-01p1 515 i d25 = 75 a v dss = 100 v r dson = 25 m ? ? ? ? ? t rr < 200 ns hiperfet tm power mosfet h-bridge topology in eco-pac 2 n-channel enhancement mode high dv/dt, low t rr , hdmos tm family mosfets symbol conditions maximum ratings v dss t j = 25c to 150c 100 v v dgr t j = 25c to 150c; r gs = 1 m ? 100 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25c 75 a i dm t c = 25c, pulse width limited by t jm 300 a i ar t c = 25c 75 a e ar t c = 25c 30 mj dv/dt i s i dm , di/dt 100 a/s, v dd v dss , 5 v/ns t j 150c, r g = 2 ? p d t c = 25c 300 w symbol conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 4 ma 2.0 4 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 v dss ; t j = 25c 250 a v gs = 0 v; t j = 125c 1 ma r ds(on) v gs = 10 v, i d = 0.5 i d25 25 m ? pulse test, t < 300 s, duty cycle d < 2% g fs v ds = 10 v; i d = i d25 , pulse test 25 30 s c iss 4500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1600 pf c rss 800 pf t d(on) 20 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 60 110 ns t d(off) r g = 2 ?, (external) 80 110 ns t f 60 90 ns q g(on) 180 260 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 36 70 nc q gd 85 160 nc r thjc 0.5 k/w r thck with heatsink compound (0.42 k/m.k; 50 m) 0.25 k/w features hiperfet tm technology - low r dson - low gate charge for high frequency operation - unclamped inductive switching (uis) capability - dv/dt ruggedness - fast intrinsic reverse diode eco-pac 2 package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - solderable pins for pcb mounting applications drives and power supplies battery or fuel cell powered automotive, industrial vehicle etc. secondary side of mains power supplies ixys reserves the right to change limits, test conditions and dimensions. pin arangement see outlines l 4 l 9 p 18 r 18 x 15 t 18 v 18 a1 e10 f10 k10 k 12 k 13 ntc l 6 x 18
? 2005 ixys all rights reserved 2 - 4 vkm 60-01p1 515 module symbol conditions maximum ratings t vj -40...+150 c t stg -40...+125 c v isol i isol 1 ma; 50/60 hz; t = 1 s 3600 v~ m d mounting torque (m4) 1.5 - 2.0 nm 14 - 18 lb.in. a max. allowable acceleration 50 m/s 2 symbol conditions characteristic values min. typ. max. d s creepage distance on surface (pin to heatsink) 11.2 mm d a strike distance in air (pin to heatsink) 11.2 mm weight 24 g source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol conditions min. typ. max. i s v gs = 0 v 75 a i sm repetitive; 300 a v sd i f = i d25 , v gs = 0 v, 1.75 v pulse test, t < 300 s, duty cycle d < 2% t rr i f = 25 a, -di/dt = 100 a/s, t j = 25c 200 ns v r = 25 v t j = 125c 300 ns ixys reserves the right to change limits, test conditions and dimensions. data according to iec 60747 refer to a single diode or transistor unless otherwise stated dimensions in mm (1 mm = 0.0394") temperature sensor ntc symbol conditions characteristic values min. typ. max. r 25 t = 25c 4.75 5.0 5.25 k ? b 25/50 3375 k
? 2005 ixys all rights reserved 3 - 4 vkm 60-01p1 515 t j - degrees c -50 -25 0 25 50 75 100 125 15 0 bv/v g(th) - normalized 0,5 0,6 0,7 0,8 0,9 1,0 1,1 1,2 v gs(th) t c - degrees c -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 t j - degrees c -50 -25 0 25 50 75 100 125 15 0 r ds(on) - normalized 0,50 0,75 1,00 1,25 1,50 1,75 2,00 2,25 2,50 i d - amperes 0 20 40 60 80 100 120 140 160 0,8 0,9 1,0 1,1 1,2 1,3 1,4 v gs = 10v v gs = 15v v gs - volts 012345678910 i d - amperes 0 25 50 75 100 125 150 t j = 125c v ds - volts 0,00,51,01,52,02,53,03,54,04,55,0 0 50 1 00 1 50 2 00 8v 5v v gs = 10v 9v 7v 6v t j = 25c i d = 37.5a bv dss t j = 25c t j = 25c ixys reserves the right to change limits, test conditions and dimensions. fig. 1 output characteristics fig. 2 input admittance fig. 3 r ds(on) vs. drain current fig. 4 tem perature dependence of drain to source resistance fig. 5 drain current vs. case temperature fig. 6 temperature dependence of breakdown and threshold voltage
? 2005 ixys all rights reserved 4 - 4 vkm 60-01p1 515 v ds - volts 1 10 100 i d - amperes 1 10 100 gate charge - ncoulombs 0 25 50 75 100 125 150 175 200 g s 0 1 2 3 4 5 6 7 8 9 10 v sd - volt 0,00 0,25 0,50 0,75 1,00 1,25 1,5 0 i s - amperes 0 25 50 75 100 125 150 v ds - volts 0 5 10 15 20 25 0 1000 2000 3000 4000 5000 6000 time - seconds 0,00001 0,0001 0,001 0,01 0,1 1 10 0,001 0,01 0,1 d=0.2 d=0.02 d=0.5 d=0.1 d=0.05 single pulse c oss c iss 1 0 1 1 m 1 1 0 v ds = 50v i d = 37.5a i g = 1ma limited by r ds(on) c rss t j = 125c t j = 25c d=0.01 f = 1mhz v ds = 25v ixys reserves the right to change limits, test conditions and dimensions. fig.9 capacitance curves fig.10 source current vs. source to drain voltage fig.7 gate charge characteristic curve fig.8 forward bias safe operating area fig.11 transient thermal i mpedance
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